*For representation only.
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 17.6A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 4.84mA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1621 pF @ 600 V |
| Power Dissipation (Max) | 176W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
11,621
In Stock
Packaging: Tube
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Reported Lead Time | 0 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
