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C3M0021120D Wolfspeed
*For representation only.

C3M0021120D

SiC MOSFETs 1.2kV 21mOHMS G3 SiC MOSFET
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 4818 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 469W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,022
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 125 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The C3M0021120D from Wolfspeed falls under the sic mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 100A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 28.8mOhm @ 50A, 15V. This part has a typical lead time of 125 Days from factory. Simplytronix carries C3M0021120D in stock, backed by a genuine parts guarantee and quick dispatch.

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