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C3M0350120D Wolfspeed
*For representation only.

C3M0350120D

SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-247-3, Industrial
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,546
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 77 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Wolfspeed's C3M0350120D is a widely used sic mosfets in electronic designs. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 7.6A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 455mOhm @ 3.6A, 15V. This part has a typical lead time of 77 Days from factory. Simplytronix stocks C3M0350120D for same-day shipping with genuine parts guaranteed.

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