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C3M0060065D

SiC MOSFETs SiC, MOSFET, 60mohm, 650V, TO-247-3, Industrial
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id 3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 600 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Product Attributes
Packaging Tube
Standard Pack Qty30
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,839
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySiC MOSFETs
RoHSRoHS Compliant By Exemption
Lifecycle
Reported Lead Time 58 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

C3M0060065D by Wolfspeed is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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