*For representation only.
BSM300C12P3E201
ROHM Semiconductor
Active
MOSFET Modules 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 80mA |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 10 V |
| Power Dissipation (Max) | 1360W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
| Package / Case | Module |
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 4 |
14,282
In Stock
Packaging: Bulk
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Reported Lead Time | 189 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8504409190 |
| USHTS | 8541590080 |
| ECCN | EAR99 |
Product Overview
BSM300C12P3E201 by ROHM Semiconductor is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
