*For representation only.
F3L8MR12W2M1HPB11BPSA1
Infineon Technologies
Active
MOSFET Modules 3-Level 1200 V CoolSiC MOSFET Easy Module
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tj) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 297nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 800V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY2B |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 18 |
7,433
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| USHTS | 8541290055 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The F3L8MR12W2M1HPB11BPSA1 from Infineon Technologies falls under the mosfet modules category. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 85A (Tj), a rds on (max) @ id, vgs of 12mOhm @ 100A, 18V and a vgs(th) (max) @ id of 5.15V @ 40mA. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source F3L8MR12W2M1HPB11BPSA1 through Simplytronix, with fast shipping and verified authenticity.
