*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 182mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 31000pF @ 10V |
| Power - Max | 2450W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 4 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | BSM600D12P4G103 |
12,081
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409190 |
| CAHTS | 8541590000 |
| USHTS | 8541590080 |
| JPHTS | 854159000 |
| TARIC | 8541590000 |
| MXHTS | 8541500100 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's BSM600D12P3G001 is a widely used mosfet modules in electronic designs. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 600A (Tc) and a rds on (max) @ id, vgs of -. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BSM600D12P3G001 in stock, backed by a genuine parts guarantee and quick dispatch.
