*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Power - Max | 1130W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Module |
| Supplier Device Package | Module |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 12 |
12,304
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8542310000 |
| USHTS | 8542310075 |
| KRHTS | 8542311000 |
| TARIC | 8542319000 |
| MXHTS | 8542310302 |
| ECCN | EAR99 |
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Product Overview
Manufactured by ROHM Semiconductor, the BSM180D12P2C101 is classified as a mosfet modules. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 204A (Tc), a vgs(th) (max) @ id of 4V @ 35.2mA and a input capacitance (ciss) (max) @ vds of 23000pF @ 10V. This part has a typical lead time of 189 Days from factory. Simplytronix carries BSM180D12P2C101 in stock, backed by a genuine parts guarantee and quick dispatch.
