*For representation only.
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Power - Max | 1130W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Module |
| Supplier Device Package | Module |
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 12 |
5,222
In Stock
Packaging: Bulk
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 189 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8542310000 |
| USHTS | 8542310075 |
| KRHTS | 8542311000 |
| TARIC | 8542319000 |
| MXHTS | 8542310302 |
| ECCN | EAR99 |
Product Overview
BSM180D12P2C101 by ROHM Semiconductor is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
