| Technology | SiCFET (Silicon Carbide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 2300V (2.3kV) |
| Current - Continuous Drain (Id) @ 25°C | 1.07kA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.59mOhm @ 1500A, 15V |
| Vgs(th) (Max) @ Id | 5.15V @ 675mA |
| Gate Charge (Qg) (Max) @ Vgs | 3980nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 143000pF @ 1500V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-XHP2K23 |
| Packaging | Tray |
| Standard Pack Qty | 1 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 20 Days (from factory) |
| Country | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
FF1300UXTR23T2M1BPSA1 by Infineon Technologies is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
