*For representation only.
F3L8MXTR12C2M2QH11BPSA1
Infineon Technologies
Active
MOSFET Modules EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 33mA |
| Gate Charge (Qg) (Max) @ Vgs | 237nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 7210pF @ 800V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 18 |
14,112
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 70 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
The F3L8MXTR12C2M2QH11BPSA1 from Infineon Technologies falls under the mosfet modules category. It features a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 95A (Tj), a rds on (max) @ id, vgs of 8.3mOhm @ 75A, 18V and a vgs(th) (max) @ id of 5.15V @ 33mA. This part has a typical lead time of 70 Days from factory. Order F3L8MXTR12C2M2QH11BPSA1 from Simplytronix for authenticated stock and same-day order processing.
