*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 185A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.62mOhm @ 280A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 112mA |
| Gate Charge (Qg) (Max) @ Vgs | 800nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 24200pF @ 800V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-62MMHB |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 10 |
11,094
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 98 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's FF3MR12KM1HSHPSA1 is a widely used mosfet modules in electronic designs. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 185A (Tc), a rds on (max) @ id, vgs of 4.62mOhm @ 280A, 18V and a vgs(th) (max) @ id of 5.1V @ 112mA. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Order FF3MR12KM1HSHPSA1 from Simplytronix for authenticated stock and same-day order processing.
