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F899MR07W1D7B11ABPSA1

MOSFET Modules EasyPACK 1B module with CoolMOS CFD7A Automotive MOSFET and PressFIT / NTC
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 8 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 12A (Tj)
Rds On (Max) @ Id, Vgs 119mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.45V @ 580µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2310pF @ 400V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
Product Attributes
Packaging Tray
Standard Pack Qty24
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,260
In Stock
Packaging: Tray
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFET Modules
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 13 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

F899MR07W1D7B11ABPSA1 by Infineon Technologies is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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