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IQDH29NE2LM5ATMA1

MOSFETs IFX FET 15V-30V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 75A (Ta), 789A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 1.448mA
Gate Charge (Qg) (Max) @ Vgs 254 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 12 V
Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-9
Package / Case 8-PowerTDFN
Product Attributes
Packaging Reel
Standard Pack Qty5000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,276
In Stock
Packaging: Reel
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✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 17 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
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