*For representation only.
IPT009N08NM6ATMA1
Infineon Technologies
Active
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in TOLL
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Ta), 425A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 278µA |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 40 V |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
| Package / Case | 8-PowerSFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
9,394
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 52 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's IPT009N08NM6ATMA1 is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V, a current, continuous drain (id) @ 25°C of 43A (Ta), 425A (Tc), a drive voltage of 8V, 10V and a rds on (max) @ id, vgs of 0.95mOhm @ 150A, 10V. This part has a typical lead time of 52 Days from factory. Simplytronix carries IPT009N08NM6ATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.
