*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 139A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 85µA |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 50V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 10-PowerWDFN |
| Supplier Device Package | PG-WHITFN-10-1 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,903
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 56 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
ISG0616N10NM5HSCATMA1 is a mosfets manufactured by Infineon Technologies. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Half Bridge), a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 19A (Ta), 139A (Tc), a rds on (max) @ id, vgs of 4mOhm @ 50A, 10V and a vgs(th) (max) @ id of 3.8V @ 85µA. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks ISG0616N10NM5HSCATMA1 for same-day shipping with genuine parts guaranteed.
