*For representation only.
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 139A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 85µA |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 50V |
| Power - Max | 3W (Ta), 167W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 10-PowerWDFN |
| Supplier Device Package | PG-WHITFN-10-1 |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,903
In Stock
Packaging: Reel
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✔ Global Shipping
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 56 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
