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IAUTN15S6N025ATMA1 Infineon Technologies
*For representation only.

IAUTN15S6N025ATMA1

MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLL (10x12)
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 245A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 75 V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,518
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the IAUTN15S6N025ATMA1 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 150 V, a current, continuous drain (id) @ 25°C of 245A (Tj), a drive voltage of 8V, 10V and a rds on (max) @ id, vgs of 2.5mOhm @ 100A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IAUTN15S6N025ATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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