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IPB017N06N3GATMA1

MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Product Attributes
Packaging Reel
Standard Pack Qty1000
Alternate / Replacement Parts
Alternate Packaging IPB017N06N3 G
Suggested Replacement
11,040
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant By Exemption
Lifecycle
Reported Lead Time 77 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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