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BSS806NEH6327XTSA1

MOSFETs N-Ch 20V 2.3A SOT-23-3
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 2.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 529 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging BSS806NE H6327
Suggested Replacement
6,705
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 56 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541299000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
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