| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current - Continuous Drain (Id) @ 25°C |
2.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 2.5V |
| Rds On (Max) @ Id, Vgs |
57mOhm @ 2.3A, 2.5V |
| Vgs(th) (Max) @ Id |
750mV @ 11µA |
| Gate Charge (Qg) (Max) @ Vgs |
1.7 nC @ 2.5 V |
| Vgs (Max) |
±8V |
| Input Capacitance (Ciss) (Max) @ Vds |
529 pF @ 10 V |
| Power Dissipation (Max) |
500mW (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Grade |
Automotive |
| Qualification |
AEC-Q101 |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-SOT23 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |