Product Categories
Product Categories

Search Products

*For representation only.

BSC155N06NDATMA1

MOSFETs IFX FET 60V
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 30V
Power - Max 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
Product Attributes
Packaging Reel
Standard Pack Qty5000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,147
In Stock
Packaging: Reel
Get Quote
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant By Exemption
Lifecycle
Reported Lead Time 63 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Similar Products
IQE036N08NM6SCATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V
IPT009N08NM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in TOLL
IMW40R025M2HXKSA1 Infineon Technologies
MOSFETs SILICON CARBIDE MOSFET
IAUTN15S6N025ATMA1 Infineon Technologies
MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLL...