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CAB450M12XM3

Discrete Semiconductor Modules SiC HalfBridgeModule 1.2kV 450A
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 450A
Rds On (Max) @ Id, Vgs 3.7mOhm @ 450A, 15V
Vgs(th) (Max) @ Id 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs 1330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 800V
Power - Max 850W
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Product Attributes
Packaging Bulk
Standard Pack Qty1
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,290
In Stock
Packaging: Bulk
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDiscrete Semiconductor Modules
RoHSNo
Lifecycle
Reported Lead Time 62 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

CAB450M12XM3 by Wolfspeed is a discrete semiconductor modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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