*For representation only.
FS03MR12A6MA1BBPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules HYBRID PACK DRIVE G1 SIC
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 240mA |
| Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 42500pF @ 600V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-HYBRIDD-2 |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 6 |
4,014
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 273 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
The FS03MR12A6MA1BBPSA1 from Infineon Technologies falls under the discrete semiconductor modules category. It features a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (3-Phase Bridge), a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 400A (Tj), a rds on (max) @ id, vgs of 3.7mOhm @ 400A, 15V and a vgs(th) (max) @ id of 5.55V @ 240mA. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. You can source FS03MR12A6MA1BBPSA1 through Simplytronix, with fast shipping and verified authenticity.
