*For representation only.
FS03MR12A6MA1BBPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules HYBRID PACK DRIVE G1 SIC
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 240mA |
| Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 42500pF @ 600V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-HYBRIDD-2 |
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 6 |
10,274
In Stock
Packaging: Tray
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | |
| Lifecycle | |
| Reported Lead Time | 273 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8504409100 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
Product Overview
FS03MR12A6MA1BBPSA1 by Infineon Technologies is a discrete semiconductor modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
