*For representation only.
FS1150R08A8P3CHPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules HybridPACK Drive G2 module
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Technical Specifications
| IGBT Type | - |
| Configuration | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 750 V |
| Current - Collector (Ic) (Max) | 600 A |
| Power - Max | 1000 W |
| Vce(on) (Max) @ Vge, Ic | 1.21V @ 15V, 600A |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 60800 pF @ 50 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-HDG2XT-7611 |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 6 |
13,299
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's FS1150R08A8P3CHPSA1 is a widely used discrete semiconductor modules in electronic designs. Notable characteristics of this part include a IGBT type of -, a configuration of Three Phase Inverter, a voltage, collector emitter breakdown of 750 V, a current, collector (ic) of 600 A, a power, max of 1000 W and a vce(on) (max) @ vge, ic of 1.21V @ 15V, 600A. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source FS1150R08A8P3CHPSA1 through Simplytronix, with fast shipping and verified authenticity.
