*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 15.1A, 18V |
| Vgs(th) (Max) @ Id | 3.9V @ 4.16mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
10,964
Units In Stock
📦
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| ECCN | EAR99 |
ℹ
Product Overview
Wolfspeed's E4MS065120K is a widely used sic mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 34A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 85mOhm @ 15.1A, 18V. This part has a typical lead time of 0 Days from factory. Simplytronix carries E4MS065120K in stock, backed by a genuine parts guarantee and quick dispatch.
