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E3M0900170D Wolfspeed
*For representation only.

E3M0900170D

SiC MOSFETs SiC, MOSFET, 900mO, 1700V, TO-247-3, Automotive Gen3
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id 4.5V @ 550µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 202 pF @ 1200 V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,406
Units In Stock
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🔑 Key Specifications
Category SiC MOSFETs
RoHS
Lifecycle New Product
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The E3M0900170D from Wolfspeed falls under the sic mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1700 V, a current, continuous drain (id) @ 25°C of 4.4A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 1.25Ohm @ 1.99A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source E3M0900170D through Simplytronix, with fast shipping and verified authenticity.

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