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E3M0016120K Wolfspeed
*For representation only.

E3M0016120K

SiC MOSFETs SiC, MOSFET, 16mO, 1200V, TO-247-4, Automotive, Gen3
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 22mOhm @ 80.28A, 15V
Vgs(th) (Max) @ Id 3.6V @ 22.08mA
Gate Charge (Qg) (Max) @ Vgs 223 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 6922 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 483W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
📦 Product Attributes
Packaging
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,810
Units In Stock
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The E3M0016120K from Wolfspeed falls under the sic mosfets category. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 125A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 22mOhm @ 80.28A, 15V. This part has a typical lead time of 0 Days from factory. Order E3M0016120K from Simplytronix for authenticated stock and same-day order processing.

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