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C3M0065090J Wolfspeed
*For representation only.

C3M0065090J

Wolfspeed Not For New Designs
SiC MOSFETs G3 SiC MOSFET 900V, 65mOhm
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 600 V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging C3M0065090J-TR
Suggested Replacement
4,073
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Wolfspeed's C3M0065090J is a widely used sic mosfets in electronic designs. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 900 V, a current, continuous drain (id) @ 25°C of 35A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 78mOhm @ 20A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order C3M0065090J from Simplytronix for authenticated stock and same-day order processing.

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