| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 53.5mOhm @ 33.3A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 9.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 15 V |
| Vgs (Max) | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 272W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Wolfspeed's C3M0040120J1-TR is a widely used sic mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 64A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 53.5mOhm @ 33.3A, 15V. This part has a typical lead time of 0 Days from factory. Order C3M0040120J1-TR from Simplytronix for authenticated stock and same-day order processing.