*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5.3V |
| Frequency - Transition | 11.2GHz |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Gain | 12.5dB |
| Power - Max | 900mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Leads |
| Supplier Device Package | UFM |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,105
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210075 |
| ECCN | EAR99 |
ℹ
Product Overview
The MT3S113TU,LF from Toshiba falls under the rf bipolar transistors category. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 5.3V, a frequency, transition of 11.2GHz, a noise figure of 1.45dB @ 1GHz, a gain of 12.5dB and a power, max of 900mW. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order MT3S113TU,LF from Simplytronix for authenticated stock and same-day order processing.
