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2SC5108-Y,LF Toshiba
*For representation only.

2SC5108-Y,LF

Toshiba Obsolete
RF Bipolar Transistors Radio-frequency Bipolar Transistor
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 6GHz
Noise Figure (dB Typ @ f) -
Gain 11dB
Power - Max 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V
Current - Collector (Ic) (Max) 30mA
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,571
Units In Stock
📦 Reel
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  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Toshiba's 2SC5108-Y,LF is a widely used rf bipolar transistors in electronic designs. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 10V, a frequency, transition of 6GHz, a noise figure of -, a gain of 11dB and a power, max of 100mW. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2SC5108-Y,LF for same-day shipping with genuine parts guaranteed.

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