*For representation only.
BFR740L3RHE6327XTSA1
Infineon Technologies
Last Time Buy
RF Bipolar Transistors NPN Silicn Germanium RF Transistor
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
| Frequency - Transition | 42GHz |
| Noise Figure (dB Typ @ f) | 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz |
| Gain | 24.5dB |
| Power - Max | 160mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 25mA, 3V |
| Current - Collector (Ic) (Max) | 30mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | PG-TSLP-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 15000 |
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Alternate / Replacement Parts
| Alternate Packaging | BFR 740L3RH E6327 |
| Suggested Replacement |
4,691
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 273 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
The BFR740L3RHE6327XTSA1 from Infineon Technologies falls under the rf bipolar transistors category. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 4.7V, a frequency, transition of 42GHz, a noise figure of 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz, a gain of 24.5dB and a power, max of 160mW. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BFR740L3RHE6327XTSA1 in stock, backed by a genuine parts guarantee and quick dispatch.
