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2SC5087R(TE85L,F) Toshiba
*For representation only.

2SC5087R(TE85L,F)

Toshiba Obsolete
RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.1dB ~ 2dB @ 1GHz
Gain -
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 20mA, 10V
Current - Collector (Ic) (Max) 80mA
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount
Package / Case SC-61AA
Supplier Device Package SMQ
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,029
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

2SC5087R(TE85L,F) is a rf bipolar transistors manufactured by Toshiba. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 12V, a frequency, transition of 8GHz, a noise figure of 1.1dB ~ 2dB @ 1GHz, a gain of - and a power, max of 150mW. This part has a typical lead time of 0 Days from factory. Simplytronix stocks 2SC5087R(TE85L,F) for same-day shipping with genuine parts guaranteed.

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