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GT50JR22(STA1,E,S) Toshiba
*For representation only.

GT50JR22(STA1,E,S)

Toshiba Active
IGBTs IGBT for Soft Switching Apps
Technical Specifications
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Power - Max 230 W
Switching Energy -
Input Type Standard
Td (on/off) @ 25°C -
Test Condition -
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,686
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
BRHTS 85365090
ECCN EAR99
Product Overview

The GT50JR22(STA1,E,S) from Toshiba falls under the igbts category. It features a IGBT type of -, a voltage, collector emitter breakdown of 600 V, a current, collector (ic) of 50 A, a current, collector pulsed of 100 A, a vce(on) (max) @ vge, ic of 2.2V @ 15V, 50A and a power, max of 230 W. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GT50JR22(STA1,E,S) for same-day shipping with genuine parts guaranteed.

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