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GT50JR21(STA1,E,S) Toshiba
*For representation only.

GT50JR21(STA1,E,S)

Toshiba Active
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ
Technical Specifications
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 230 W
Switching Energy -
Input Type Standard
Td (on/off) @ 25°C -
Test Condition -
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,684
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 30 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Toshiba's GT50JR21(STA1,E,S) is a widely used igbts in electronic designs. It features a IGBT type of -, a voltage, collector emitter breakdown of 600 V, a current, collector (ic) of 50 A, a current, collector pulsed of 100 A, a vce(on) (max) @ vge, ic of 2V @ 15V, 50A and a power, max of 230 W. This part has a typical lead time of 30 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GT50JR21(STA1,E,S) for same-day shipping with genuine parts guaranteed.

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