Search Products

Menu
GT30N135SRA,S1E Toshiba
*For representation only.

GT30N135SRA,S1E

Toshiba Active
IGBTs 1350V DISCRETE IGBT TRANS
Technical Specifications
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1350 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 60A
Power - Max 348 W
Switching Energy -, 1.3mJ (off)
Input Type Standard
Gate Charge 270 nC
Td (on/off) @ 25°C -
Test Condition 300V, 60A, 39Ohm, 15V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
📦 Product Attributes
Packaging Reel
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,398
Units In Stock
📦 Reel
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

Toshiba's GT30N135SRA,S1E is a widely used igbts in electronic designs. Key specifications include a IGBT type of -, a voltage, collector emitter breakdown of 1350 V, a current, collector (ic) of 60 A, a current, collector pulsed of 120 A, a vce(on) (max) @ vge, ic of 2.6V @ 15V, 60A and a power, max of 348 W. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order GT30N135SRA,S1E from Simplytronix for authenticated stock and same-day order processing.

Similar Products
GT50JR22(STA1,E,S)
GT50JR22(STA1,E,S) Toshiba
IGBTs IGBT for Soft Switching Apps
GT20N135SRA,S1E
GT20N135SRA,S1E Toshiba
IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A
GT50JR21(STA1,E,S)
GT50JR21(STA1,E,S) Toshiba
IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ
GT40WR21,Q
GT40WR21,Q Toshiba
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A
GT40QR21(STA1,E,D
GT40QR21(STA1,E,D Toshiba
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) MQO=25 V=1200 IC=4...