| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
| Power - Max | 348 W |
| Switching Energy | -, 1.3mJ (off) |
| Input Type | Standard |
| Gate Charge | 270 nC |
| Td (on/off) @ 25°C | - |
| Test Condition | 300V, 60A, 39Ohm, 15V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Packaging | Reel |
| Standard Pack Qty | 30 |
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Toshiba's GT30N135SRA,S1E is a widely used igbts in electronic designs. Key specifications include a IGBT type of -, a voltage, collector emitter breakdown of 1350 V, a current, collector (ic) of 60 A, a current, collector pulsed of 120 A, a vce(on) (max) @ vge, ic of 2.6V @ 15V, 60A and a power, max of 348 W. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order GT30N135SRA,S1E from Simplytronix for authenticated stock and same-day order processing.