*For representation only.
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Technical Specifications
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Power - Max | 312 W |
| Switching Energy | -, 700µJ (off) |
| Input Type | Standard |
| Gate Charge | 185 nC |
| Td (on/off) @ 25°C | - |
| Test Condition | 300V, 40A, 39Ohm, 15V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
11,583
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 58 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The GT20N135SRA,S1E from Toshiba falls under the igbts category. Key specifications include a IGBT type of -, a voltage, collector emitter breakdown of 1350 V, a current, collector (ic) of 40 A, a current, collector pulsed of 80 A, a vce(on) (max) @ vge, ic of 2.4V @ 15V, 40A and a power, max of 312 W. This part has a typical lead time of 58 Days from factory and ships with a full manufacturer datasheet available for download. You can source GT20N135SRA,S1E through Simplytronix, with fast shipping and verified authenticity.
