*For representation only.
SiC Schottky Diodes 650 V, 6A High surge Silicon Carbide power Schottky diode
SiC Schottky Diodes 650 V, 6A High surge Silicon Carbide power Schottky diode
Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 130 µA @ 650 V |
| Capacitance @ Vr, F | 670pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 175°C |
Product Attributes
| Packaging | |
| Standard Pack Qty |
9,808
In Stock
Packaging:
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | |
| Lifecycle | |
| Reported Lead Time | (from factory) |
Documentation
Not Available
