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IDDD10G65C6XTMA1

SiC Schottky Diodes SIC DIODES
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 29A
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 33 µA @ 420 V
Capacitance @ Vr, F 495pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case 10-PowerSOP Module
Supplier Device Package PG-HDSOP-10-1
Operating Temperature - Junction -55°C ~ 175°C
Product Attributes
Packaging Reel
Standard Pack Qty1700
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,334
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySiC Schottky Diodes
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 56 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
MXHTS 8541100101
ECCN EAR99
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