*For representation only.
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 29A |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 33 µA @ 420 V |
| Capacitance @ Vr, F | 495pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 10-PowerSOP Module |
| Supplier Device Package | PG-HDSOP-10-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1700 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | IDH10G65C6XKSA1 |
3,054
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IDDD10G65C6XTMA1 is classified as a sic schottky diodes. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 29A, a reverse recovery time of 0 ns, a current, reverse leakage @ vr of 33 µA @ 420 V and a capacitance @ vr, F of 495pF @ 1V, 1MHz. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IDDD10G65C6XTMA1 for same-day shipping with genuine parts guaranteed.
