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C6D06065Q-TR

SiC Schottky Diodes SiC, Schottky Diode, 6A, 650V, QFN 8x8 T&R, Industrial
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 21A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 6 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 20 µA @ 650 V
Capacitance @ Vr, F 393pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case 4-PowerVQFN
Supplier Device Package 4-QFN (8x8)
Operating Temperature - Junction -55°C ~ 175°C
Product Attributes
Packaging Reel
Standard Pack Qty2500
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,036
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySiC Schottky Diodes
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 0 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

C6D06065Q-TR by Wolfspeed is a sic schottky diodes designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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