*For representation only.
M2P45M12W2-1LA
STMicroelectronics
Active
MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (Three Phase Inverter) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 60.5mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 2086pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | 32-PowerDIP Module (1.264", 32.10mm) |
| Supplier Device Package | ACEPACK DMT-32 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 11 |
5,946
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 196 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by STMicroelectronics, the M2P45M12W2-1LA is classified as a mosfet modules. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (Three Phase Inverter), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 30A (Tc) and a rds on (max) @ id, vgs of 60.5mOhm @ 20A, 18V. This part has a typical lead time of 196 Days from factory. Order M2P45M12W2-1LA from Simplytronix for authenticated stock and same-day order processing.
