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M1P45M12W2-1LA STMicroelectronics
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M1P45M12W2-1LA

MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (Phase Leg)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 60.5mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 2086pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case 32-PowerDIP Module (1.264", 32.10mm)
Supplier Device Package ACEPACK DMT-32
📦 Product Attributes
Packaging Tube
Standard Pack Qty 11
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,496
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 196 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

STMicroelectronics's M1P45M12W2-1LA is a widely used mosfet modules in electronic designs. It features a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (Phase Leg), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 30A (Tc) and a rds on (max) @ id, vgs of 60.5mOhm @ 20A, 18V. This part has a typical lead time of 196 Days from factory. Simplytronix stocks M1P45M12W2-1LA for same-day shipping with genuine parts guaranteed.

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