*For representation only.
A2U8M12W3-FC
STMicroelectronics
Active
MOSFET Modules ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Three Level Inverter) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV), 750V |
| Current - Continuous Drain (Id) @ 25°C | 180A, 140A |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 2mA, 4V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 288nC @ 18V, 304nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 7660pF @ 400V, 7370pF @ 800V |
| Power - Max | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 18 |
3,217
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 196 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by STMicroelectronics, the A2U8M12W3-FC is classified as a mosfet modules. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Three Level Inverter), a FET feature of -, a drain to source voltage of 1200V (1.2kV), 750V, a current, continuous drain (id) @ 25°C of 180A, 140A and a rds on (max) @ id, vgs of 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V. This part has a typical lead time of 196 Days from factory. Simplytronix stocks A2U8M12W3-FC for same-day shipping with genuine parts guaranteed.
