*For representation only.
A2TBH45M65W3-FC
STMicroelectronics
Active
MOSFET Modules ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 5 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tj) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 400V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 18 |
3,844
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 196 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The A2TBH45M65W3-FC from STMicroelectronics falls under the mosfet modules category. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 5 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 650V, a current, continuous drain (id) @ 25°C of 28A (Tj) and a rds on (max) @ id, vgs of 35mOhm @ 30A, 18V. This part has a typical lead time of 196 Days from factory. You can source A2TBH45M65W3-FC through Simplytronix, with fast shipping and verified authenticity.
