*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 68A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 36.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 7230pF @ 800V |
| Power - Max | 361W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | 7-PowerSIP Module |
| Supplier Device Package | DOT-247 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 225 |
11,894
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The SCZ4011KTAC23 from ROHM Semiconductor falls under the mosfet modules category. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 106A (Tc) and a rds on (max) @ id, vgs of 15mOhm @ 68A, 18V. This part has a typical lead time of 189 Days from factory. Simplytronix stocks SCZ4011KTAC23 for same-day shipping with genuine parts guaranteed.
