*For representation only.
BSM300C12P3E201
ROHM Semiconductor
Active
MOSFET Modules 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 80mA |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 10 V |
| Power Dissipation (Max) | 1360W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
| Package / Case | Module |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 4 |
14,659
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409190 |
| USHTS | 8541590080 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's BSM300C12P3E201 is a widely used mosfet modules in electronic designs. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 300A (Tc), a vgs(th) (max) @ id of 5.6V @ 80mA and a vgs of +22V, -4V. This part has a typical lead time of 189 Days from factory. Simplytronix carries BSM300C12P3E201 in stock, backed by a genuine parts guarantee and quick dispatch.
