*For representation only.
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4864pF @ 400V |
| Power - Max | 189W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | 12-SSIP Exposed Pad, Formed Leads |
| Supplier Device Package | APMCD-B16 |
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 72 |
5,613
In Stock
Packaging: Tube
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Test Report Available Upon Request
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 105 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| USHTS | 8541290095 |
| ECCN | EAR99 |
Product Overview
FAM65CR51ADZ1 by onsemi is a discrete semiconductor modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
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