*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 3V |
| Frequency - Transition | 53GHz |
| Noise Figure (dB Typ @ f) | 0.75dB @ 6GHz |
| Gain | 15.8dB |
| Power - Max | 160mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 205 @ 2mA, 3V |
| Current - Collector (Ic) (Max) | 30mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | DFN1006C-3 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 10000 |
12,224
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by NXP Semiconductors, the BFU730LXZ is classified as a rf bipolar transistors. It features a transistor type of NPN, a voltage, collector emitter breakdown of 3V, a frequency, transition of 53GHz, a noise figure of 0.75dB @ 6GHz, a gain of 15.8dB and a power, max of 160mW. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BFU730LXZ in stock, backed by a genuine parts guarantee and quick dispatch.
