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2SC5226A-4-TL-E onsemi
*For representation only.

2SC5226A-4-TL-E

onsemi Active
RF Bipolar Transistors VHF TO UHF WIDEBAND AMPLIFIER
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1dB @ 1GHz
Gain 12dB
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA, 5V
Current - Collector (Ic) (Max) 70mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70 / MCP3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging 2SC5226A-5-TL-E
Suggested Replacement
12,352
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
USHTS 8541210075
ECCN EAR99
Product Overview

2SC5226A-4-TL-E is a rf bipolar transistors manufactured by onsemi. Notable characteristics of this part include a transistor type of NPN, a voltage, collector emitter breakdown of 10V, a frequency, transition of 7GHz, a noise figure of 1dB @ 1GHz, a gain of 12dB and a power, max of 150mW. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries 2SC5226A-4-TL-E in stock, backed by a genuine parts guarantee and quick dispatch.

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