*For representation only.
A5G21H605W19NR3
NXP Semiconductors
Obsolete
GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
⚙
Technical Specifications
| Technology | GaN |
| Configuration | - |
| Frequency | 2.11GHz ~ 2.2GHz |
| Gain | 15.1dB |
| Voltage - Test | 48 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 300 mA |
| Power - Output | 85W |
| Voltage - Rated | 125 V |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | OM-780-4S4S |
| Supplier Device Package | OM-780-4S4S |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 250 |
3,354
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
NXP Semiconductors's A5G21H605W19NR3 is a widely used gan fets in electronic designs. It features a technology of GaN, a configuration of -, a frequency of 2.11GHz ~ 2.2GHz, a gain of 15.1dB, a voltage, test of 48 V and a current rating of -. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order A5G21H605W19NR3 from Simplytronix for authenticated stock and same-day order processing.
