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A5G07H800W19NR3 NXP Semiconductors
*For representation only.

A5G07H800W19NR3

GaN FETs Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
Technical Specifications
Technology GaN
Configuration -
Frequency 717MHz ~ 850MHz
Gain 18.3dB
Voltage - Test 50 V
Current Rating (Amps) -
Noise Figure -
Current - Test 350 mA
Power - Output 112W
Voltage - Rated 125 V
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case OM-780-4S4S
Supplier Device Package OM-780-4S4S
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,255
Units In Stock
📦 Reel
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  • Global shipping
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The A5G07H800W19NR3 from NXP Semiconductors falls under the gan fets category. Key specifications include a technology of GaN, a configuration of -, a frequency of 717MHz ~ 850MHz, a gain of 18.3dB, a voltage, test of 50 V and a current rating of -. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks A5G07H800W19NR3 for same-day shipping with genuine parts guaranteed.

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