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A5G18H610W19NR3 NXP Semiconductors
*For representation only.

A5G18H610W19NR3

GaN FETs Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
Technical Specifications
Technology GaN
Configuration -
Frequency 1.805GHz ~ 1.88GHz
Gain 16.6dB
Voltage - Test 48 V
Current Rating (Amps) -
Noise Figure -
Current - Test 300 mA
Power - Output 85W
Voltage - Rated 125 V
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case OM-780-4S4S
Supplier Device Package OM-780-4S4S
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,974
Units In Stock
📦 Reel
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  • Global shipping
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

NXP Semiconductors's A5G18H610W19NR3 is a widely used gan fets in electronic designs. Key specifications include a technology of GaN, a configuration of -, a frequency of 1.805GHz ~ 1.88GHz, a gain of 16.6dB, a voltage, test of 48 V and a current rating of -. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries A5G18H610W19NR3 in stock, backed by a genuine parts guarantee and quick dispatch.

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